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| Silicon Schottky Diodes q q q BAS 125 ... For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 125 BAS 125-04 Marking 13 14 Ordering Code Pin Configuration (tape and reel) Q62702-D1316 Q62702-D1321 Package1) SOT-23 BAS 125-05 15 Q62702-D1322 BAS 125-06 16 Q62702-D1323 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 02.96 BAS 125 ... q q q For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring Low forward voltage ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAS 125-07 Marking 17 Ordering Code Pin Configuration (tape and reel) Q62702-D1327 Package1) SOT-143 Maximum Ratings per Diode Parameter Reverse voltage Forward current Surge forward current, t 10 ms Total power dissipation, TS 25 C 3) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS Symbol VR IF IFSM Ptot Tj Tstg Values 25 100 500 250 150 - 55 ... + 150 Unit V mA mW C 725 565 K/W 1) 2) 3) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. 450 mW per package. Semiconductor Group 2 BAS 125 ... Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Reverse current VR = 20 V VR = 25 V Forward voltage IF = 1 mA IF = 10 mA IF = 35 mA Diode capacitance VR = 0, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Symbol min. IR - - VF - - - CT RF - - 385 530 800 - 15 410 - 900 1.1 - pF - - 1 10 mV Values typ. max. A Unit Semiconductor Group 3 BAS 125 ... Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina BAS 125-04, -05, -06, -07 Forward current IF = f (TS; TA*) *Package mounted on alumina BAS 125 Reverse current IR = f (VR) Semiconductor Group 4 BAS 125 ... Diode capacitance CT = f (VR) f = 1 MHz Differential forward resistance RF = f (IF) f = 10 kHz Semiconductor Group 5 |
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